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DISCRETE SEMICONDUCTORS
DATA SHEET
BLV103 UHF power transistor
Product specification March 1993
Philips Semiconductors
Product specification
UHF power transistor
FEATURES * Internal matching for an optimum wideband capability and high gain * Emitter-ballasting resistors for optimum temperature profile * Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 6-lead SOT171 flange envelope with a ceramic cap. It is intended for common emitter, class-AB operation in cellular radio base stations in the 960 MHz frequency band. All leads are isolated from the mounting base. PINNING - SOT171
k, halfpage
BLV103
QUICK REFERENCE DATA RF performance at Th = 25 C in a common emitter test circuit. MODE OF OPERATION c.w. class-AB f (MHz) 960 VCE (V) 24 PL (W) 4 Gp (dB) > 11.5 C (%) > 45
WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
PIN CONFIGURATION
PIN 1 2 3 4 5 6
DESCRIPTION emitter emitter base collector emitter emitter
Top view 1 3 5 2
handbook, halfpage
c
4 6
b
MBB012
e
MBA931 - 1
Fig.1 Simplified outline and symbol.
March 1993
2
Philips Semiconductors
Product specification
UHF power transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current total power dissipation storage temperature range junction operating temperature CONDITIONS open emitter open base open collector DC or average value Tmb = 25 C - - - - - -65 - MIN.
BLV103
MAX. 50 30 4 1.25 17 150 200
UNIT V V V A W C C
5 handbook, halfpage IC (A) Tmb = 25 oC Th = 70 oC
(1)
MRA366
MRA365
handbook, 25 halfpage
Ptot (W) 20
(3) (2) (1)
1
15
10
5
0.1
1
10
VCE (V)
102
0
0
20
40
60
80
100 120 Th (oC)
(1) Second breakdown limit (independent of temperature).
(1) Continuous DC operation. (2) Continuous RF operation. (3) Short time operation during mismatch.
Fig.2 DC SOAR.
Fig.3 Power/temperature derating.
THERMAL RESISTANCE SYMBOL Rth j-mb Rth mb-h PARAMETER from junction to mounting base from mounting base to heatsink CONDITIONS Tmb = 25 C; Pdis = 17 W 10.3 0.4 MAX. UNIT K/W K/W
March 1993
3
Philips Semiconductors
Product specification
UHF power transistor
CHARACTERISTICS Tj = 25 C. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES hFE Cc PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector-emitter leakage current DC current gain collector capacitance CONDITIONS open emitter; IC = 4 mA open base; IC = 30 mA open collector; IE = 2 mA VBE = 0; VCE = 30 V VCE = 25 V; IC = 300 mA VCB = 25 V; IE = Ie = 0; f = 1 MHz VCE = 25 V; IC = 20 mA; f = 1 MHz MIN. 50 30 4 - 20 - TYP. - - - - 40 6.6
BLV103
MAX. UNIT - - - 1 - 8 pF V V V mA
Cre
feedback capacitance
-
3.5
4.5
pF
handbook, 50 halfpage
MRA361
handbook, halfpage
20
MRA358
hFE 40
VCE = 25 V Cc (pF) 5V 10
30
20
10
0 0
0.2
0.4
0.6
0.8
IC (A)
1
0
0
10
20
VCB (V)
30
IE = ie = 0; f = 1 MHz.
Fig.4
DC current gain as a function of collector current, typical values.
Fig.5
Collector capacitance as a function of collector-base voltage, typical values.
March 1993
4
Philips Semiconductors
Product specification
UHF power transistor
APPLICATION INFORMATION RF performance at Th = 25 C in a common emitter test circuit, Rth mb-h = 0.4 K/W. MODE OF OPERATION c.w. class-AB 960 960 f (MHz) 24 26 VCE (V) 5 5 ICQ (mA) 4 4 PL (W) GP (dB) > 11.5 typ. 13 typ. 14
BLV103
c (%) > 45 typ. 48 typ. 50
handbook, halfpage
16
MRA359
80
MRA364
8 handbook, halfpage PL (W) 6 VCE = 26 V 24 V
GP (dB) 12
GP (%) 60
8
40
4
4
20
2
0 0
0 2 4 6 PL (W) 8 0 0 200 400 600 800 PIN (mW)
Class-AB operation; ICQ = 5 mA; f = 960 MHz; VCE = 24 V.
Class-AB operation; ICQ = 5 mA; f = 960 MHz.
Fig.6
Gain and efficiency as functions of load power, typical values.
Fig.7
Load power as a function of drive power, typical values.
Ruggedness in class-AB operation The BLV103 is capable of withstanding a full load mismatch corresponding to VSWR = 50:1 through all phases at rated output power under the following conditions: VCE = 24 V; f = 960 MHz; Th = 25 C; Rth mb-h = 0.4 K/W.
March 1993
5
Philips Semiconductors
Product specification
UHF power transistor
BLV103
handbook, full pagewidth
R1 VB C7 L5 L6
C6
C8
R2 L8 C9 L7 VCC C10
50 input
C1
L1
L2
L3
C5 L4
D.U.T.
C12 L9
L10
L11
L12
C15
50 output
C2
C3
C4
C11
C13
C14
MDA537
Fig.8 Class-AB test circuit at f = 960 MHz.
List of components (see test circuit) COMPONENT C1, C6, C7, C8, C15 C2, C3, C13, C14 C4, C5 C9 C10 C11, C12 L1, L12 L2, L11 L3 L4 L5 DESCRIPTION multilayer ceramic chip capacitor film dielectric trimmer multilayer ceramic chip capacitor (note 1) 35 V solid aluminum capacitor multilayer ceramic chip capacitor VALUE 330 pF 1.4 to 5.5 pF 5.1 pF 2.2 F 3 x 100 nF in parallel 50 50 50 43 9 mm x 2.4 mm 23 mm x 2.4 mm 16 mm x 2.4 mm 3 mm x 3 mm int. dia. 3 mm; length 5 mm; leads 2 mm x 5 mm 4312 020 36642 int. dia. 4 mm; length 5 mm; leads 2 mm x 5 mm 43 50 10 14.5 mm x 3 mm 4.5 mm x 2.4 mm 2322 151 71009 2222 128 50228 2222 809 09001 DIMENSIONS CATALOGUE NO.
multiplayer ceramic chip capacitor (note 2) 6.2 pF stripline (note 3) stripline (note 3) stripline (note 3) stripline (note 3) 3 turns enamelled 0.8 mm copper wire
L6, L8 L7
grade 3B Ferroxcube wideband HF choke 4 turns enamelled 0.8 mm copper wire
L9 L10 R1, R2
stripline (note 3) stripline (note 3) 0.4 W metal film resistor
March 1993
6
Philips Semiconductors
Product specification
UHF power transistor
Notes 1. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality. 2. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
BLV103
3. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (r = 2.2); thickness 132 inch.
handbook, full pagewidth
122 mm
copper straps
copper straps
rivets
rivets 70 mm
rivets
M2
rivets
copper straps M3
copper straps
C7
L6 L8 R1 C6 C8 C10 R2 L5 C5 L7 C12 L4 C4 L10 L9 C11 C13 C14 L11 L12 C15 C9
C1
L1
L2
L3
C3
C3
MDA536
The circuit and components are situated on one side of a copper-clad PTFE fibre-glass board; the other side is fully metallized and serves as a ground plane. Connections are made by means of fixing screws, hollow rivets and copper straps around the board and under the emitters, to provide a direct contact between the components side and the ground plane.
Fig.9 Component layout for 960 MHz class-AB test circuit.
March 1993
7
Philips Semiconductors
Product specification
UHF power transistor
BLV103
MRA362
handbook, 10 halfpage
handbook, halfpage
16
MRA363
Zi () 8
ZL () 12 ri
XL
6 xi 4 RL 4 2 8
0 840
880
920
960 f (MHz)
1000
0 840
880
920
960 f (MHz)
1000
Class-AB operation; VCE = 24 V; ICQ = 5 mA; PL = 4 W; Th = 25 C.
Class-AB operation; VCE = 24 V; ICQ = 5 mA; PL = 4 W; Th = 25 C.
Fig.10 Input impedance (series components) as a function of frequency, typical values.
Fig.11 Load impedance (series components) as a function of frequency, typical values.
MRA360
16 handbook, halfpage GP (dB) 12
8
handbook, halfpage
4 Zi ZL
MBA451
0 840
880
920
960
f (MHz)
1000
Class-AB operation; VCE = 24 V; ICQ = 5 mA; PL = 4 W; Th = 25 C.
Fig.12 Definition of transistor impedance.
Fig.13 Power gain as a function of frequency, typical values.
March 1993
8
Philips Semiconductors
Product specification
UHF power transistor
PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads
BLV103
SOT171A
D
A F D1
U1 q H1 b1 C w2 M C
B
c
2
4
6
H
U2
E1
E
A
1
3
5
b e
p w3 M
w1 M A B Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 6.81 6.07 b 2.15 1.85 b1 3.20 2.89 c 0.16 0.07 D 9.25 9.04 D1 9.30 8.99 E 5.95 5.74 E1 6.00 5.70 e 3.58 F H H1 p 3.43 3.17 Q q U1 U2 w1 0.51 w2 1.02 0.04 w3 0.26 0.01
3.05 11.31 9.27 2.54 10.54 9.01
4.32 24.90 6.00 18.42 4.11 24.63 5.70
0.268 0.085 0.126 0.006 0.364 0.366 0.234 0.236 0.120 0.445 0.365 0.135 0.170 0.980 0.236 0.725 0.02 0.140 0.239 0.073 0.114 0.003 0.356 0.354 0.226 0.224 0.100 0.415 0.355 0.125 0.162 0.970 0.224
OUTLINE VERSION SOT171A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
March 1993
9
Philips Semiconductors
Product specification
UHF power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLV103
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
March 1993
10

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